Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe$_{2}$ films
| Autor: | Wagner, Stefan, Yim, Chanyoung, McEvoy, Niall, Kataria, Satender, Yokaribas, Volkan, Kuc, Agnieszka, Pindl, Stephan, Fritzen, Claus-Peter, Heine, Thomas, Duesberg, Georg S., Lemme, Max C. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Nano Letters, 18, 3738-3745, 2018 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/acs.nanolett.8b00928 |
| Popis: | Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400{\deg}C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines. Comment: 33 pages, 5 figures, including supporting information with 10 figures |
| Databáze: | arXiv |
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