Epitaxial UN and $\alpha$-U$_2$N$_3$ Thin Films
| Autor: | Bright, E. Lawrence, Rennie, S., Cattelan, M., Fox, N. A., Goddard, D. T., Springell, R. |
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| Rok vydání: | 2018 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Single crystal epitaxial thin films of UN and U$_2$N$_3$ have been grown for the first time by reactive DC magnetron sputtering. These films provide ideal samples for fundamental research into the potential accident tolerant fuel, UN, and U$_2$N$_3$, its intermediate oxidation product. Films were characterised using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), with XRD analysis showing both thin films to be [001] oriented and composed of a single domain. The specular lattice parameters of the UN and U$_2$N$_3$ films were found to be 4.895\,\AA{} and 10.72\,\AA{}, respectively, with the UN film having a miscut of 2.6\,$^\circ$. XPS showed significant differences in the N-1s peak between the two films, with area analysis showing both films to be stoichiometric. Comment: 7 pages, 11 figures |
| Databáze: | arXiv |
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