| Autor: |
Schmidgall, Emma R., Chakravarthi, Srivatsa, Gould, Michael, Christen, Ian R., Hestroffer, Karine, Hatami, Fariba, Fu, Kai-Mei C. |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Nano Lett. 18, 1175 (2018) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acs.nanolett.7b04717 |
| Popis: |
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation. |
| Databáze: |
arXiv |
| Externí odkaz: |
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