Measuring frequency fluctuations in nonlinear nanomechanical resonators
| Autor: | Maillet, Olivier, Zhou, Xin, Gazizulin, Rasul R., Ilic, Bojan R., Parpia, Jeevak M., Bourgeois, Olivier, Fefferman, Andrew D., Collin, Eddy |
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| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | ACS Nano 2018 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/acsnano.8b01634 |
| Popis: | Advances in nanomechanics within recent years have demonstrated an always expanding range of devices, from top-down structures to appealing bottom-up MoS$_2$ and graphene membranes, used for both sensing and component-oriented applications. One of the main concerns in all of these devices is frequency noise, which ultimately limits their applicability. This issue has attracted a lot of attention recently, and the origin of this noise remains elusive up to date. In this Letter we present a very simple technique to measure frequency noise in nonlinear mechanical devices, based on the presence of bistability. It is illustrated on silicon-nitride high-stress doubly-clamped beams, in a cryogenic environment. We report on the same $T/f$ dependence of the frequency noise power spectra as reported in the literature. But we also find unexpected {\it damping fluctuations}, amplified in the vicinity of the bifurcation points; this effect is clearly distinct from already reported nonlinear dephasing, and poses a fundamental limit on the measurement of bifurcation frequencies. The technique is further applied to the measurement of frequency noise as a function of mode number, within the same device. The relative frequency noise for the fundamental flexure $\delta f/f_0$ lies in the range $0.5 - 0.01~$ppm (consistent with literature for cryogenic MHz devices), and decreases with mode number in the range studied. The technique can be applied to {\it any types} of nano-mechanical structures, enabling progresses towards the understanding of intrinsic sources of noise in these devices. Comment: Published 7 may 2018 |
| Databáze: | arXiv |
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