Autor: |
Zhang, Shuai, Xie, Faji, Pan, Xing-Chen, Qin, Yuyuan, Cao, Lu, Wang, Xuefeng, Song, Fengqi, Wang, Baigeng |
Rok vydání: |
2017 |
Předmět: |
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Zdroj: |
Appl. Phys. Lett. 112, 243106 (2018) |
Druh dokumentu: |
Working Paper |
DOI: |
10.1063/1.5031013 |
Popis: |
We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 devices. While increasing the magnetic field from 0 to 12 Tesla, the fluctuation magnitudes are found reduced by a ratio of sqrt(2) and form a quantized step. The step is observed both in n-type and p-type transport. It is also confirmed in the nonlocal measurements. This essentially demonstrates the breaking of the time reversal symmetry of the three-dimensional Z2 topological insulators. |
Databáze: |
arXiv |
Externí odkaz: |
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