Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating
| Autor: | Taivansaikhan, P., Tsevelmaa, T., Rhim, S. H., Hong, S. C., Odkhuu, D. |
|---|---|
| Rok vydání: | 2017 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/1361-648X/aab283 |
| Popis: | Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achieved biaxial compressive strain of $\sim$1--2\% or applying an electric-field by means of the charge density modulation. This magnetization reversal is driven by the strain- and electric-field-induced changes in the spin-orbit coupled \emph{d} states of the first-neighbor Zn atom to the Zn-vacancy. These findings open interesting prospects for exploiting strain and electric-field engineering to manipulate magnetism and magnetization orientation of two-dimensional materials. Comment: 7 pages, 8 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|