Band structure of Cd$_3$As$_2$ from Shubnikov - de Haas and de Haas - van Alphen effects
| Autor: | Bodnar, Jan |
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| Rok vydání: | 2017 |
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| Druh dokumentu: | Working Paper |
| Popis: | Experimental values of SdH and dHvA periods and cyclotron effective masses found by Rosenman and Doi et al. have been compared with the theoretical predictions derived in this work for a tetragonal narrow gap semiconductor. By the least square fit method the values of band parameters were obtained. It has been established that Cd$_3$As$_2$ has inverted band structure resembling HgTe under tensile stress. Comment: The following paper on the band structure of Cd$_3$As$_2$ was published by Jan Bodnar in the Proceedings of the 3rd International Conference on the Physics of Narrow Gap Semiconductors (Warszawa 1977), p. 311. A few months after the conference Jan died suddenly of a heart attack at the age of 27. The paper appears without changes. Wlodek Zawadzki, [zawad@ifpan.edu.pl] |
| Databáze: | arXiv |
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