Real-time X-ray Monitoring of the Nucleation and Growth of AlN Epitaxial Films on Sapphire (0001)
| Autor: | Ju, Guangxu, Highland, Matthew J., Eastman, Jeffrey A., Sichel-Tissot, Rebecca, Baldo, Peter M., Zapol, Peter, Fuoss, Paul H. |
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| Rok vydání: | 2017 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and roughness from initial nucleation layers to fullyrelaxed AlN films. A growth rate transient was observed, consistent with the initial formation of non-coalesced islands with significant oxygen incorporation from the substrate. Following island coalescence, a steady state growth rate was seen with a continuous shift of the c and a lattice parameters towards the relaxed bulk values as growth progressed, with films reaching a fully relaxed state at thicknesses of about 30 nm. Comment: 5 pages, 4 figures |
| Databáze: | arXiv |
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