Real-time X-ray Monitoring of the Nucleation and Growth of AlN Epitaxial Films on Sapphire (0001)

Autor: Ju, Guangxu, Highland, Matthew J., Eastman, Jeffrey A., Sichel-Tissot, Rebecca, Baldo, Peter M., Zapol, Peter, Fuoss, Paul H.
Rok vydání: 2017
Předmět:
Druh dokumentu: Working Paper
Popis: We report the results of x-ray scattering studies of AlN on c-plane sapphire during reactive radiofrequency magnetron sputtering. The sensitivity of in situ x-ray measurements allowed us to follow the structural evolution of strain and roughness from initial nucleation layers to fullyrelaxed AlN films. A growth rate transient was observed, consistent with the initial formation of non-coalesced islands with significant oxygen incorporation from the substrate. Following island coalescence, a steady state growth rate was seen with a continuous shift of the c and a lattice parameters towards the relaxed bulk values as growth progressed, with films reaching a fully relaxed state at thicknesses of about 30 nm.
Comment: 5 pages, 4 figures
Databáze: arXiv