Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors

Autor: Casalino, M., Sassi, U., Goykhman, I., Eiden, A., Lidorikis, E., Milana, S., De Fazio, D., Tomarchio, F., Iodice, M., Coppola, G., Ferrari, A. C.
Rok vydání: 2017
Předmět:
Zdroj: ACS Nano 11, 10955 (2017)
Druh dokumentu: Working Paper
DOI: 10.1021/acsnano.7b04792
Popis: We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity~20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars
Databáze: arXiv