| Autor: |
Mandal, Soumen, Thomas, Evan L. H., Middleton, Callum, Gines, Laia, Griffiths, James, Kappers, Menno, Oliver, Rachel, Wallis, David J., Goff, Lucy E., Lynch, Stephen A., Kuball, Martin, Williams, Oliver A. |
| Rok vydání: |
2017 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1021/acsomega.7b01069 |
| Popis: |
Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN. |
| Databáze: |
arXiv |
| Externí odkaz: |
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