Quantum dots with split enhancement gate tunnel barrier control
| Autor: | Rochette, S., Rudolph, M., Roy, A. -M., Curry, M., Eyck, G. Ten, Manginell, R., Wendt, J., Pluym, T., Carr, S. M., Ward, D., Lilly, M. P., Carroll, M. S., Pioro-Ladrière, M. |
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| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 114, 083101 (2019) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.5091111 |
| Popis: | We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures. Comment: v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures |
| Databáze: | arXiv |
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