| Autor: |
Lu, T. M., Tracy, L. A., Laroche, D., Huang, S. -H., Chuang, Y., Su, Y. -H., Li, J. -Y., Liu, C. W. |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
Scientific Reports 7, 2468 (2017) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/s41598-017-02757-2 |
| Popis: |
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2.4\times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $\nu=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors. |
| Databáze: |
arXiv |
| Externí odkaz: |
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