Observation of an environmentally insensitive solid state spin defect in diamond

Autor: Rose, Brendon C., Huang, Ding, Zhang, Zi-Huai, Tyryshkin, Alexei M., Sangtawesin, Sorawis, Srinivasan, Srikanth, Loudin, Lorne, Markham, Matthew L., Edmonds, Andrew M., Twitchen, Daniel J., Lyon, Stephen A., de Leon, Nathalie P.
Rok vydání: 2017
Předmět:
Druh dokumentu: Working Paper
DOI: 10.1126/science.aao0290
Popis: Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks.
Databáze: arXiv
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