| Autor: |
Liu, Henan, Zhang, Yong, Steenbergen, Elizabeth H., Liu, Shi, Lin, Zhiyuan, Zhang, Yong-Hang, Kim, Jeomoh, Ji, Mi-Hee, Detchprohm, Theeradetch, Dupuis, Russell D., Kim, Jin K., Hawkins, Samuel D., Klem, John F. |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Phys. Rev. Applied 8, 034028 (2017) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevApplied.8.034028 |
| Popis: |
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge. |
| Databáze: |
arXiv |
| Externí odkaz: |
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