Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

Autor:	Barrett, N, Zagonel, L F, Renault, O, Bailly, A
Rok vydání:	2017
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	J. Phys.: Condens. Matter 21 314015 2009
Druh dokumentu:	Working Paper
DOI:	10.1088/0953-8984/21/31/314015
Popis:	An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage. Comment: 7 pages, 7 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1703.10298 Zobrazit plný text záznamu View this record from Arxiv