| Autor: |
Zhou, Hong, Maize, Kerry, Qiu, Gang, Shakouri, Ali, Ye, Peide D. |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
Applied Physics Letters, 111, 092102 (2017) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.5000735 |
| Popis: |
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped b-Ga2O3 nano-membrane as the channel. b-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the b-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications. |
| Databáze: |
arXiv |
| Externí odkaz: |
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