| Autor: |
Tran, Son, Yang, Jiawei, Gillgren, Nathaniel, Espiritu, Timothy, Shi, Yanmeng, Watanabe, Kenji, Taniguchi, Takashi, Moon, Seongphill, Baek, Hongwoo, Smirnov, Dmitry, Bockrath, Marc, Chen, Ruoyu, Lau, Chun Ning |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
Science Advances 3, e1603179 (2017) |
| Druh dokumentu: |
Working Paper |
| Popis: |
Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and exciton condensation. Here we demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to tradition QWs, each 2D layer is ambipolar, and can be tuned into n-doped, p-doped or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with enhanced Lande g-factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double or wide QWs with unusual properties such as high anisotropy. |
| Databáze: |
arXiv |
| Externí odkaz: |
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