Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
| Autor: | Chen, Lingxiu, He, Li, Wang, Hui Shan, Wang, Haomin, Tang, Shujie, Cong, Chunxiao, Xie, Hong, Li, Lei, Xia, Hui, Li, Tianxin, Wu, Tianru, Zhang, Daoli, Deng, Lianwen, Yu, Ting, Xie, Xiaoming, Jiang, Mianheng |
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| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Nature Communications, 8, 14703, 2017 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/ncomms14703 |
| Popis: | Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. Comment: 32 pages, 4 figures, Supplementary information |
| Databáze: | arXiv |
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