Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
| Autor: | Dau, M. T., Vergnaud, C., Marty, A., Rortais, F., Beigné, C., Boukari, H., Bellet-Amalric, E., Guigoz, V., Renault, O., Alvarez, C., Okuno, H., Pochet, P., Jamet, M. |
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| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Appl. Phys. Lett. 110, 011909 (2017) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4973519 |
| Popis: | Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substrate and reveals characteristics of a stoichiometric 2H-phase. The layered MoSe 2 exhibits polycrystalline features with domains separated by defects and boundaries. Temperature and magnetic field dependent resistivity measurements unveil a carrier hopping character described within two-dimensional variable range hopping mechanism. Moreover, a negative magnetoresistance was observed, stressing a fascinating feature of the charge transport under the application of a magnetic field in the layered MoSe 2 system. This negative magnetoresistance observed at millimeter-scale is similar to that observed recently at room temperature inWS2 flakes at a micrometer scale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalability highlights the fact that the underlying physical mechanism is intrinsic to these two-dimensional materials and occurs at very short scale. Comment: 15 pages, 6 figures |
| Databáze: | arXiv |
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