Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation
| Autor: | Alekseev, P. A., Dunaevskiy, M. S., Kirilenko, D. A., Smirnov, A. N., Davydov, V. Yu., Berkovits, V. L. |
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| Rok vydání: | 2017 |
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| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4976681 |
| Popis: | We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaO$_{x}$. The latter compound is responsible for appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of $\beta$-Ga$_{2}$O$_{3}$ nanocrystals proceed on surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with formation of $\beta$-Ga$_{2}$O$_{3}$ nanocrystals occurs. Observed transformation of WZ-GaAs to $\beta$-Ga$_{2}$O$_{3}$ nanocrystals presents an available way for creation of axial and radial heterostuctures ZB-GaAs/$\beta$-Ga$_{2}$O$_{3}$ for optoelectronic and photonic applications. Comment: 12 pages, 5 figures |
| Databáze: | arXiv |
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