Autor: |
Lino, M. A., de Sousa, J. S., da Costa, D. R., Chaves, A., Pereira, J. M., Farias, G. A. |
Rok vydání: |
2017 |
Předmět: |
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Druh dokumentu: |
Working Paper |
DOI: |
10.1088/1361-6463/aa75e4 |
Popis: |
We present a theoretical study of the charging effects in single and double layer black phosphorus quantum dots (BPQDs) with lateral sizes of 2 nm and 3 nm. We demonstrate that the charging of BPQDs are able to store up to an $N_{max}$ electron (that depends on the lateral size and number of layers in the QD), after which structural instabilities arises. For example, 3 nm wide hydrogen-passivated single layer BPQDs can hold a maximum of 16 electrons, and an additional electron causes the expelling of hydrogen atoms from the QD borders. We also calculated the additional energy ($E_A$) spectrum. For single layer QDs with 2 and 3 nm of lateral sizes, the average $E_A$ is around 0.4 eV and 0.3 eV, respectively. For double layer QDs with the same sizes, the average $E_A$ is around 0.25 eV and 0.2 eV, respectively. |
Databáze: |
arXiv |
Externí odkaz: |
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