Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

Autor:	Piatti, E., Galasso, S., Tortello, M., Nair, J. R., Gerbaldi, C., Daghero, D., Bruna, M., Borini, S., Gonnelli, R. S.
Rok vydání:	2017
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Zdroj:	E. Piatti et al., Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene, Appl. Surf. Sci. 395, 37 (2017)
Druh dokumentu:	Working Paper
DOI:	10.1016/j.apsusc.2016.06.192
Popis:	We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab-initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments. Comment: 6 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1701.02701 Zobrazit plný text záznamu View this record from Arxiv