Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

Autor:	Moscatelli, F., Maccagnani, P., Passeri, D., Bilei, G. M., Servoli, L., Morozzi, A., Betta, G. -F. Dalla, Mendicino, R., Boscardin, M., Zorzi, N.
Rok vydání:	2016
Předmět:	Physics - Instrumentation and Detectors High Energy Physics - Experiment
Zdroj:	2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
Druh dokumentu:	Working Paper
DOI:	10.1109/NSSMIC.2015.7581944
Popis:	In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures. Comment: 6 pages,12 figures. arXiv admin note: text overlap with arXiv:1611.10138
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1611.10132 Zobrazit plný text záznamu View this record from Arxiv