Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si
| Autor: | Feng, Baojie, Fu, Botao, Kasamatsu, Shusuke, Ito, Suguru, Cheng, Peng, Liu, Cheng-Cheng, Feng, Ya, Wu, Shilong, Mahatha, Sanjoy K., Sheverdyaeva, Polina, Moras, Paolo, Arita, Masashi, Sugino, Osamu, Chiang, Tai-Chang, Shimada, Kenya, Miyamoto, Koji, Okuda, Taichi, Wu, Kehui, Chen, Lan, Yao, Yugui, Matsuda, Iwao |
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| Rok vydání: | 2016 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/s41467-017-01108-z |
| Popis: | Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the {\Gamma} point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices. Comment: Accepted in Nature Communications |
| Databáze: | arXiv |
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