TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)

Autor:	Gale, Ella
Rok vydání:	2016
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Computer Science - Emerging Technologies 68Mxx 92Exx 92Fxx 94Cxx B.3.1 B.6.1 C.1.3
Zdroj:	Semiconductor Science and Technology, Volume 29, Number 10, 104004, (2014)
Druh dokumentu:	Working Paper
Popis:	The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies. Comment: Review, 29 pages, 2 figures, journal
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1611.04456 Zobrazit plný text záznamu View this record from Arxiv