Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence

Autor:	Lee, K. -H., Barnham, K. W. J., Roberts, John S., Alonso-Alvarez, D., Hylton, N. P., Fuhrer, M., Ekins-Daukes, N. J.
Rok vydání:	2016
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
Popis:	The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have very low non-radiative recombination rate and high radiative efficiency compared to the control InGaP sample. Along with the analyses of PL emission spectrum and external quantum efficiencies, it suggests that this is due to small confinement potentials in the conduction band but high confinement potentials in the valence band. These results explain several features found in InGaP/InGaAsP MQW solar cells previously. Comment: 6 pages, 5 figures, 2 tables
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1611.01923 Zobrazit plný text záznamu View this record from Arxiv