High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering
| Autor: | Ahmed, Faisal, Kim, Young Duck, Choi, Min Sup, Liu, Xiaochi, Qu, Deshun, Yang, Zheng, Hu, Jiayang, Herman, Irving P., Hone, James, Yoo, Won Jong |
|---|---|
| Rok vydání: | 2016 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a SiO2 substrate exhibited a maximum current density of 3.3 x 10E10 A/m2 at an electric field of 5.58 MV/m, several times higher than multilayer MoS2. Our breakdown thermometry analysis revealed that self-heating was impeded along BP-dielectric interface, resulting in a thermal plateau inside the channel and eventual Joule breakdown. Using a size-dependent electro-thermal transport model, we extracted an interfacial thermal conductance of 1-10 MW/m2 K for the BP-dielectric interfaces. By using hBN as a dielectric material for BP instead of thermally resistive SiO2 (about 1.4 W/m K), we observed a 3 fold increase in breakdown power density and a relatively higher electric field endurance together with efficient and homogenous thermal spreading because hBN had superior structural and thermal compatibility with BP. We further confirmed our results based on micro-Raman spectroscopy and atomic force microscopy, and observed that BP devices on hBN exhibited centrally localized hotspots with a breakdown temperature of 600K, while the BP device on SiO2 exhibited a hotspot in the vicinity of the electrode at 520K. Comment: 24 pages, 5 figures |
| Databáze: | arXiv |
| Externí odkaz: |
|