| Autor: |
Schröder, Tim, Trusheim, Matthew E., Walsh, Michael, Li, Luozhou, Zheng, Jiabao, Schukraft, Marco, Pacheco, Jose L., Camacho, Ryan M., Bielejec, Edward S., Sipahigil, Alp, Evans, Ruffin E., Sukachev, Denis D., Nguyen, Christian T., Lukin, Mikhail D., Englund, Dirk |
| Rok vydání: |
2016 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/ncomms15376 |
| Popis: |
The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices. |
| Databáze: |
arXiv |
| Externí odkaz: |
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