Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

Autor:	Kononov, A., Egorov, S. V., Titova, N., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Emelyanov, E. A., Deviatov, E. V.
Rok vydání:	2016
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Superconductivity
Zdroj:	JETP Letters, 105, 508 (2017)
Druh dokumentu:	Working Paper
DOI:	10.1134/S0021364017080057
Popis:	We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane. Comment: 5 pages
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1610.07792 Zobrazit plný text záznamu View this record from Arxiv