Straintronic magneto-tunneling-junction based ternary content addressable memory

Autor:	Manasi, S. Dey, Rashid, M. M. Al, Atulasimha, J., Bandyopadhyay, S., Trivedi, A. R.
Rok vydání:	2016
Předmět:	Computer Science - Emerging Technologies
Zdroj:	Part I: IEEE Transactions on Electron Devices (Volume: 64, Issue: 7, Page(s): 2835-2841, July 2017), Part II: IEEE Transactions on Electron Devices (Volume: 64, Issue: 7, Page(s): 2842-2848, July 2017)
Druh dokumentu:	Working Paper
Popis:	Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of energy during switching. Unfortunately, they are also relatively error-prone and have low resistance on/off ratio. This suggests that as computing elements, they are best suited for non-Boolean architectures. Here, we propose and analyze a ternary content addressable memory implemented with s-MTJs and some transistors. It overcomes challenges encountered by traditional all-transistor implementations, resulting in exceptionally high cell density. Comment: 8 pages, 11 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1610.03902 Zobrazit plný text záznamu View this record from Arxiv