Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Autor:	Bomben, Marco, Bagolini, Alvise, Boscardin, Maurizio, Bosisio, Luciano, Calderini, Giovanni, Chauveau, Jacques, Ducourthial, Audrey, Giacomini, Gabriele, Marchiori, Giovanni, Zorzi, Nicola
Rok vydání:	2016
Předmět:	Physics - Instrumentation and Detectors High Energy Physics - Experiment
Druh dokumentu:	Working Paper
DOI:	10.1109/NSSMIC.2015.7581991
Popis:	In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given. Comment: 4 pages, 9 figures, conference record of 2015 IEEE NSS, San Diego (CA), 31/10-7/11/2015
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1609.02128 Zobrazit plný text záznamu View this record from Arxiv