Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Autor:	Du, Lingjie, Li, Tingxin, Lou, Wenkai, Wu, Xingjun, Liu, Xiaoxue, Han, Zhongdong, Zhang, Chi, Sullivan, Gerard, Ikhlassi, Amal, Chang, Kai, Du, Rui-Rui
Rok vydání:	2016
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Phys. Rev. Lett. 119, 056803 (2017)
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevLett.119.056803
Popis:	We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI. Comment: Phys. Rev. Lett. accepted version. 21 pages, 9 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1608.06588 Zobrazit plný text záznamu View this record from Arxiv