Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
Autor: | Du, Lingjie, Li, Tingxin, Lou, Wenkai, Wu, Xingjun, Liu, Xiaoxue, Han, Zhongdong, Zhang, Chi, Sullivan, Gerard, Ikhlassi, Amal, Chang, Kai, Du, Rui-Rui |
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Rok vydání: | 2016 |
Předmět: | |
Zdroj: | Phys. Rev. Lett. 119, 056803 (2017) |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevLett.119.056803 |
Popis: | We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI. Comment: Phys. Rev. Lett. accepted version. 21 pages, 9 figures |
Databáze: | arXiv |
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