Gain spectroscopy of a type-II VECSEL chip
| Autor: | Lammers, Christian, Stein, Markus, Berger, Christian, Möller, Christoph, Fuchs, Christian, Perez, Antje Ruiz, Rahimi-Iman, Arash, Hader, Jörg, Moloney, Jerome, Stolz, Wolfgang, Koch, Stephan W., Koch, Martin |
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| Rok vydání: | 2016 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4971333 |
| Popis: | Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering. Comment: 4 pages, 4 figures |
| Databáze: | arXiv |
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