Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

Autor: Demenev, A. A., Kulakovskii, V. D., Schneider, C., Brodbeck, S., Kamp, M., Höfling, S., Lobanov, S. V., Weiss, T., Gippius, N. A., Tikhodeev, S. G.
Rok vydání: 2016
Předmět:
Zdroj: Appl. Phys. Lett. 109, 171106 (2016)
Druh dokumentu: Working Paper
DOI: 10.1063/1.4966279
Popis: We report the elliptically, close to circularly polarized lasing at $\hbar\omega = 1.473$ and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
Databáze: arXiv