| Autor: |
Chen, D., Zhao, L. X., He, J. B., Liang, H., Zhang, S., Li, C. H., Shan, L., Ren, C., Wang, S. C., Ren, Z. A., Chen, G. F. |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Physical Review B 94, 174411 (2016) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevB.94.174411 |
| Popis: |
We have investigated the magnetoresistance (MR) and Hall resistivity properties of the single crystals of tantalum sulfide, Ta3S2, which was recently predicted to be a new type II Weyl semimetal. Large MR (up to ~8000% at 2 K and 16 T), field-induced metal-insulator-like transition and nonlinear Hall resistivity are observed at low temperatures. The large MR shows a strong dependence on the field orientation, leading to a giant anisotropic magnetoresistance (AMR) effect. For the field applied along the b-axis (B//b), MR exhibits quadratic field dependence at low fields and tends towards saturation at high fields; while for B//a, MR presents quadratic field dependence at low fields and becomes linear at high fields without any trend towards saturation. The analysis of the Hall resistivity data indicates the coexistence of a large number of electrons with low mobility and a small number of holes with high mobility. Shubnikov-de Haas (SdH) oscillation analysis reveals three fundamental frequencies originated from the three-dimensional (3D) Fermi surface (FS) pockets. We find that the semi-classical multiband model is sufficient to account for the experimentally observed MR in Ta3S2. |
| Databáze: |
arXiv |
| Externí odkaz: |
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