Ballistic graphene Josephson junctions from the short to the long regime
| Autor: | Borzenets, I. V., Amet, F., Ke, C. T., Draelos, A. W., Wei, M. T., Seredinski, A., Watanabe, K., Taniguchi, T., Bomze, Y., Yamamoto, M., Tarucha, S., Finkelstein, G |
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| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 117, 237002 (2016) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.117.237002 |
| Popis: | We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/\delta E)$. The extracted energies $\delta E$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $\delta E$ (or $\Delta$) and the number of the junction's transversal modes. Comment: Main text: 4 pages, 4 figures. Supplementary: 2 pages, 4 figures |
| Databáze: | arXiv |
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