Single-Layered Hittorf's Phosphorus: A Wide-Bandgap High Mobility 2D Material
| Autor: | Schusteritsch, Georg, Uhrin, Martin, Pickard, Chris J. |
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| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Nano Lett. 2016, 16, 2975-2980 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1021/acs.nanolett.5b05068 |
| Popis: | We propose here a two-dimensional material based on a single layer of violet or Hittorf's phosphorus. Using first-principles density functional theory, we find it to be energetically very stable, comparable to other previously proposed single-layered phosphorus structures. It requires only a small energetic cost of approximately $0.04~\text{eV/atom}$ to be created from its bulk structure, Hittorf's phosphorus, or a binding energy of $0.3-0.4~\text{J/m}^2$ per layer, suggesting the possibility of exfoliation in experiments. We find single-layered Hittorf's phosphorus to be a wide band gap semiconductor with a direct band gap of approximately $2.5$~eV and our calculations show it is expected to have a high and highly anisotropic hole mobility with an upper bound lying between $3000-7000$~cm$^2$V$^{-1}$s$^{-1}$. These combined properties make single-layered Hittorf's phosphorus a very good candidate for future applications in a wide variety of technologies, in particular for high frequency electronics, and optoelectronic devices operating in the low wavelength blue color range. Comment: 17 pages, 3 figures |
| Databáze: | arXiv |
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