Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors

Autor:	Luo, Xi, Xiong, Kuanchen, Hwang, James C. M., Du, Yuchen, Ye, PeiDe
Rok vydání:	2016
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1109/MWSYM.2016.7540290
Popis:	Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 us or less, which is consistent with the lack of hysteresis, carrier freeze-out or persistent photoconductivity in DC characteristics. These results confirm that the phosphorene MOSFET can be a viable microwave transistor for both small-signal and large-signal applications. Comment: Accepted for oral presentation at IMS 2016
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1603.05156 Zobrazit plný text záznamu View this record from Arxiv