Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions
| Autor: | Aramberri, Hugo, Muñoz, M. Carmen |
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| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 95, 205422 (2017) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.95.205422 |
| Popis: | Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Se$_3$ with uniaxial and biaxal strain, which show metallic and insulating phases, both topologically trivial and non-trivial. In particular, uniaxial tension can drive Sb$_2$Te$_3$ into a topologically trivial insulating phase. Thus, we propose a Sb$_2$Te$_3$/Bi$_2$Te$_3$ heterojunction in which a topological interface state arises in the common gap of this topological insulator-normal insulator heterojunction that can be switched on or off by means of uniaxial strain. This interface state is confined in the Sb$_2$Te$_3$ subsystem and is physically protected from ambient impurities. Therefore, Sb$_2$Te$_3$/Bi$_2$Te$_3$ heterojunctions can host robust helical interface states with promising spintronic applications. Comment: 16 pages, 18 figures |
| Databáze: | arXiv |
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