Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

Autor: Kawakami, E., Jullien, T., Scarlino, P., Ward, D. R., Savage, D. E., Lagally, M. G., Dobrovitski, V. V., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A., Vandersypen, L. M. K.
Rok vydání: 2016
Předmět:
Zdroj: PNAS 2016 113 (42) 11738-11743
Druh dokumentu: Working Paper
DOI: 10.1073/pnas.1603251113
Popis: The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $\mu$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.
Databáze: arXiv