Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Autor:	Redaelli, L., Mukhtarova, A., Valdueza-Felip, S., Ajay, A., Bougerol, C., Himwas, C., Faure-Vincent, J., Durand, C., Eymery, J., Monroy, E.
Rok vydání:	2016
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science Physics - Optics
Zdroj:	Appl. Phys. Lett. 105, 131105 (2014)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4896679
Popis:	We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance. Comment: This is an author-created, un-copyedited version of an article accepted for publication in Applied Physics Letters. The Version of Record is available online at http://dx.doi.org/10.1063/1.4896679
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1602.07227 Zobrazit plný text záznamu View this record from Arxiv