| Autor: |
Ewert, M., Schmidt, Th., Flege, J. I., Heidmann, I., Grzela, T., Klesse, W. M., Foerster, M., Aballe, L., Schroeder, T., Falta, J. |
| Rok vydání: |
2016 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
The reactive growth of cobalt germanide on Ge(001) was investigated by means of in-situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction ($\mu$-LEED), and ex-situ atomic force microscopy (AFM). At a Co deposition temperature of 670{\deg}C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. Combining XAS-PEEM and $\mu$-LEED, we were able to identify a large part of the islands to consist of CoGe$_2$, with many of them having an unusual epitaxial relationship: CoGe$_2$[$\bar110$](111) $\parallel$ Ge[$\bar110$](001). Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co$_5$Ge$_7$ and CoGe. The occurrence of these intermediate phases is promoted by defects, as revealed by comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates. |
| Databáze: |
arXiv |
| Externí odkaz: |
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