| Autor: |
Liang, Yu-Han, Nuhfer, T., Towe, Elias |
| Rok vydání: |
2016 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1116/1.4943016 |
| Popis: |
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices. The two major difficulties are growth of high crystalline quality films with aluminum-rich compositions, and efficiently doping such films p-type. These problems have severely limited use of aluminum-rich nitride films grown by molecular beam epitaxy. A way around these problems is through use of a liquid-metal-enabled approach to molecular beam epitaxy. Although the presence of a liquid metal layer at the growth front is reminiscent of conventional liquid phase epitaxy, this approach is different in its details. Conventional liquid epitaxy is a near-thermodynamic equilibrium process which liquid-metal assisted molecular beam epitaxy is not. Growth of aluminum-rich nitrides is primarily driven by the kinetics of the molecular vapor fluxes, and the surface diffusion of adatoms through a liquid metal layer before incorporation. This paper reports on growth of high crystalline quality and highly doped aluminum-containing nitride films. Measured optical and electrical characterization data show that the approach is viable for growth of atomically smooth aluminum-containing nitride heterostructures. Extremely high p-type doping of up to $6 \times 10$$^{17}$ cm$^{-3}$ and n-type doping of up to $1 \times 10$$^{20}$ cm$^{-3}$ in Al$_{0.7}$Ga$_{0.3}$N films was achieved. Use of these metal-rich conditions is expected to have a significant impact on high efficiency and high power optoelectronic and electronic devices that require both high crystalline quality and highly doped (Al,Ga)N films. |
| Databáze: |
arXiv |
| Externí odkaz: |
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