Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
| Autor: | Di Bartolomeo, Antonio, Giubileo, Filippo, Iemmo, Laura, Romeo, Francesco, Russo, Saverio, Unal, Selim, Passacantando, Maurizio, Grossi, Valentina, Cucolo, Anna Maria |
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| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Applied Physics Letters 109, 023510 (2016) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4958618 |
| Popis: | We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices. Comment: Research article, 8 pages, 5 figures |
| Databáze: | arXiv |
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