| Autor: |
Abhilash, T. S., De Alba, Roberto, Zhelev, Nikolay, Craighead, Harold G, Parpia, Jeevak M |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
Nanoscale 7, 14109 (2015) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1039/c5nr03501e |
| Popis: |
We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 +- 340 Ohm-micrometer. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors. |
| Databáze: |
arXiv |
| Externí odkaz: |
|
