Local spectroscopy of moir\'e-induced electronic structure in gate-tunable twisted bilayer graphene
| Autor: | Wong, Dillon, Wang, Yang, Jung, Jeil, Pezzini, Sergio, DaSilva, Ashley M., Tsai, Hsin-Zon, Jung, Han Sae, Khajeh, Ramin, Kim, Youngkyou, Lee, Juwon, Kahn, Salman, Tollabimazraehno, Sajjad, Rasool, Haider, Watanabe, Kenji, Taniguchi, Takashi, Zettl, Alex, Adam, Shaffique, MacDonald, Allan H., Crommie, Michael F. |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 92, 155409 (2015) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.92.155409 |
| Popis: | Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moir\'e patterns and moir\'e super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moir\'e bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime. Comment: 4 figures |
| Databáze: | arXiv |
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