Electron localization in self-assembled Si/Ge(111) quantum dots

Autor:	Stepina, Natalia, Zinovieva, Aigul, Zinovyev, Vladimir, Deryabin, Alexander, Dvurechenskii, Anatoly, Kulik, Leonid
Rok vydání:	2015
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1088/0268-1242/30/12/125013
Popis:	Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor $g=2.0022\pm0.0001$ and ESR line width $\Delta H\approx1.2$ Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs. Comment: 7 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1509.06901 Zobrazit plný text záznamu View this record from Arxiv