Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates

Autor:	Maliakkal, Carina B., Rahman, A. Azizur, Hatui, Nirupam, Chalke, Bhagyashree A., Bapat, Rudheer D., Bhattacharya, Arnab
Rok vydání:	2015
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1016/j.jcrysgro.2015.12.044
Popis:	Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the influence of carrier gas, growth temperature, reactor pressure, reactant flow rates and substrate orientation in order to obtain thin nanowires. The nanowires grew along the <10-11> and <10-10> axes depending on the substrate orientation. These nanowires were further characterized using x-ray diffraction, electron microscopy, photoluminescence and Raman spectroscopy. Comment: Replaced the "various" in the title with the specific planes used
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1509.01507 Zobrazit plný text záznamu View this record from Arxiv