| Autor: |
Riazimehr, Sarah, Bablich, Andreas, Schneider, Daniel, Kataria, Satender, Passi, Vikram, Yim, Chanyoung, Duesberg, Georg S., Lemme, Max C. |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Solid-State Electronics, 115, 207-212, 2016 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1016/j.sse.2015.08.023 |
| Popis: |
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2)/p-type silicon photodiodes. |
| Databáze: |
arXiv |
| Externí odkaz: |
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